| 摘要 |
PROBLEM TO BE SOLVED: To reduce the contact resistance at connections of a capacitor electrode itself and shorten the manufacturing process, as well as to shorten the manufacturing process of a semiconductor device comprising a memory section and a peripheral circuit. SOLUTION: A vertical capacitor electrode provided on a substrate via an insulation film is constituted of a wall in a desired thickness having a profile to surround a desired region. A plug formed in the insulation film and the wall of the vertical capacitor electrode are in direct contact with each other at the profile section surrounding the desired region. |
