发明名称 SEMICONDUCTOR DEVICE AND ACTIVE MATRIX TYPE DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To optimize making of a polycrystal by laser annealing. SOLUTION: A driver-containing active matrix type display device or the like comprises a metal layer 32 formed on a partial region on a transparent substrate, and a buffer layer 11 provided to cove any of the metal layer 32 forming region and a metal layer 32 non-forming region. In this case, even on the layer 11, a first polycrystal silicon film is disposed on the metal layer forming region, and a second polycrystal silicon film is formed on the non- forming region. The layer 11 has sufficient film thickness and thermal capacity, an increased interlayer distance between the active layer and the lower metal layer is increased, and hence a heat leakage of the metal layer can be relieved. Thus, first and second polycrystal silicon films having suitable grain sizes can be obtained by laser annealing by setting an amorphous silicon film formed on the layer 11 to the same conditions.</p>
申请公布号 JP2002299632(A) 申请公布日期 2002.10.11
申请号 JP20010102378 申请日期 2001.03.30
申请人 SANYO ELECTRIC CO LTD 发明人 YAMADA TSUTOMU
分类号 G02F1/1368;G09F9/30;H01L21/20;H01L21/336;H01L21/77;H01L27/12;H01L29/786;(IPC1-7):H01L29/786;G02F1/136 主分类号 G02F1/1368
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