METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate comprising an insulator layer of a high breakdown voltage, in a method of manufacturing a semiconductor substrate wherein a SiGe layer is stacked at least on the insulator layer. SOLUTION: The method of manufacturing a semiconductor substrate comprises a first process of forming the SiGe layer 1 on a silicon substrate 3, and a second process of forming the insulator layer 2 on the silicon substrate 3.