FERROELECTRIC FILM AND METHOD OF MANUFACTURING THE SAME, FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME, FERROELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME, AND FUNCTIONAL FILM AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a novel ferroelectric film formed of a material which is not an oxide ferroelectric material nor polyvinylidene fluoride-based organic ferroelectric material and a method of manufacturing the same, a ferroelectric capacitor comprising the ferroelectric film and a method of manufacturing the same, a ferroelectric memory device comprising the ferroelectric capacitor, and a functional film having a novel structure and a method of manufacturing the same. SOLUTION: The ferroelectric film 30 comprises a film 32 including the donor and a film 34 including the acceptor. At least, one of the film 32 including the donor and the film 34 including the acceptor comprises a self-organized film formed by voluntary gathering a material and then chemical absorption of the material. The functional film 210 comprises a film 212 including the donor and a film 214 including the acceptor.