发明名称 PROTECTIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To realize ESD protection between all the terminals mounted on an LSI. SOLUTION: In a protective circuit having an element for protecting the inner circuit of a semiconductor device against electrostatic discharge or electrical overstress, a bypass line 14 independent from the line of the inner circuit 15 is provided in the semiconductor device and protective elements 11-13 are connected between the bypass line 14 and the terminals 16-18 of the inner circuit 15, respectively.
申请公布号 JP2002299566(A) 申请公布日期 2002.10.11
申请号 JP20010102884 申请日期 2001.04.02
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KOIZUMI HIROSHI;KOMINE YUKIO
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L27/06;H01L27/092;(IPC1-7):H01L27/04;H01L21/823 主分类号 H01L27/04
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