发明名称 |
PROTECTIVE CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To realize ESD protection between all the terminals mounted on an LSI. SOLUTION: In a protective circuit having an element for protecting the inner circuit of a semiconductor device against electrostatic discharge or electrical overstress, a bypass line 14 independent from the line of the inner circuit 15 is provided in the semiconductor device and protective elements 11-13 are connected between the bypass line 14 and the terminals 16-18 of the inner circuit 15, respectively.
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申请公布号 |
JP2002299566(A) |
申请公布日期 |
2002.10.11 |
申请号 |
JP20010102884 |
申请日期 |
2001.04.02 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
KOIZUMI HIROSHI;KOMINE YUKIO |
分类号 |
H01L27/04;H01L21/822;H01L21/8238;H01L27/06;H01L27/092;(IPC1-7):H01L27/04;H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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