| 摘要 |
PROBLEM TO BE SOLVED: To provide a device with a dielectric layer that has a lead compound dielectric layer and has high reliability. SOLUTION: An Au electrode 2 is formed in a stripe of a thickness of about 0.5μm as a back plate on an alumina sintered body base 1c. The lead compound dielectric layer 3 of trilead tetroxide-magnesium oxide-niobium oxide is formed thereon in a thickness of 20μm. A barium titanate dielectric layer 4 is formed thereon in a thickness of 7μm as an anti-reaction dielectric layer. A first Si3 N4 film 5 of film thickness of about 30 nm is prepared through radio-frequency sputtering method, and a ZnS: Mn luminescent layer 6 of film thickness of about 700 nm is formed. After a second Si3 N4 film 7 and an SiO2 film 8 are prepared, the element is subjected to heat treatment in vacuum or in an inert gas. Finally, an ITO electrode 9 is prepared in a film thickness of about 200 nm as a transparent electrode through radio-frequency sputtering method, and is subjected to etching so that it is formed into a stripe from perpendicular to the Au electrode 2.
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