| 摘要 |
PURPOSE: A plasma etching machine is provided to maintain plasma density in high concentration by adhering an LCD board closely to a focus ring, thereby obtaining a high etching rate and etching uniformity. CONSTITUTION: A plasma etching machine including an etching chamber(110) in which a dry etching process is being proceeded by using plasma state gas, upper and lower electrodes(121,122) separated from each other within the etching chamber at a predetermined gap, and a radio frequency power(119) selectively connected to the upper electrode or the lower electrode, wherein the plasma etching machine includes a lower ring(124) covering the outer peripheral surface of the lower electrode, a focus ring(125) placed closely to the outer peripheral surface of the lower electrode on the lower ring, and a board(120) mounted on the upper surface of the lower electrode to be adhered closely to the focus ring.
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