GALLIUM INDIUM NITRIDE SMOOTH STRUCTURE FOR GROUP III NITRIDE DEVICES

摘要

PROBLEM TO BE SOLVED: To form an indium-containing smooth structure between a substrate and an active region of a III nitride light emitting device to improve the surface characteristics of a device layer. SOLUTION: In some embodiments, the smooth structure is typically a single layer isolated by a spacer layer not containing indium from an active region. The smooth layer includes an indium composition less than the active region and is typically deposited at higher temperatures than the active region. The spacer layer is typically deposited during lowering of the temperature in a reactor from a smooth layer deposition temperature to an active region deposition temperature. In another embodiment, to improve the surface characteristics, a graded smooth region is used. The smooth region may have a graded composition and/or graded dopant concentration.