发明名称 NITRIDE SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To increase relaxation vibration frequency, increase responsivity and improve RIN characteristic, by decreasing free-carrier absorption loss, in a clad layer adjacent to a core for reducing the threshold current. SOLUTION: In the laser element, both or one of clad layers is arranged to have a double-layer structure for restraining the impurity concentration, of one of the clad layers adjacent to a core, to a low level.
申请公布号 JP2002299762(A) 申请公布日期 2002.10.11
申请号 JP20010101925 申请日期 2001.03.30
申请人 NICHIA CHEM IND LTD 发明人 WATANABE YUSUKE;NAGAHAMA SHINICHI
分类号 C23C16/34;H01S5/22;H01S5/323;H01S5/343;(IPC1-7):H01S5/22 主分类号 C23C16/34
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