| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser element of a ridge waveguide type, which has largeθpara and proper light output/injection current characteristics, that is a high kink level. SOLUTION: At manufacturing of a ridge waveguide type semiconductor laser element, constants a, b and c in equations (1) to (3) are set, so that if the difference denoting the difference between an effective refractive index neff1 within a ridge, with respect to oscillation wavelength and an effective refractive indexΔneff2 on the sides of the ridge satisfies the relationΔn<=neff1 -neff2 and W denotes the width of the ridge, equation (1)Δn<=a×W+b (where a and b denotes constants for determination of kink level) is satisfied, equation (2) W>=c (where c denotes the constant for prescription of the minimum ridge width at the time of forming the ridge) is satisfied, and equation (3)Δn>=d (where d denotes a constant prescribed by the desiredθpara ) is satisfied in an x-y coordinate system having an x axis W (μm) and a y axisΔn. Then at least any of the type and thickness of the insulating film, the thickness of the electrode film on the insulating film, and the type and thickness of the clad layer on side of the ridge are set so that a combination ofΔn and W satisfies the above three equations.
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