VAPOR GROWTH EQUIPMENT AND VAPOR GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide vapor growth equipment or a vapor growth method, which enables effectively vapor growth of a uniform semiconductor film excellent in crystallinity on a substrate, when vapor growth of a large substrate or simultaneous vapor growth of a plurality of substrates is performed, and when a vapor growth temperature is set at a high temperature and vapor growth is performed, in vapor growth using a horizontal type reaction tube. SOLUTION: The vapor growth equipment has a constitution where an interval between a susceptor and a reaction tube wall part facing the susceptor is narrower than an interval in the vertical direction in a reaction tube wall between a gas supplying pot of a material gas inlet part and the upper stream side end portion of a material gas channel of the susceptor. Gas containing material gas is supplied to the horizontal-type reaction tube of the vapor growth equipment, thereby performing vapor growth.