| 摘要 |
PROBLEM TO BE SOLVED: To prevent an increase in an on resistance of an element or a decrease in a breakdown voltage generated by irregularities of a channel length. SOLUTION: A silicon carbide semiconductor device comprises channel set regions 7a, 7b partly deepened in a junction depth of a second gate region 7 in a site disposed on a first gate region 3 to a second gate region 7. In this case, a distance to the gate region 3 is made shortest at the regions 7a, 7b. Thus, channels are set by the regions 7a, 7b, and channel length is decided by widths L1, L2 of a channel length direction at the regions 7a, 7b. Thus, the irregularities of the channel length can be eliminated, and hence on resistance of the element generated due to the irregularities of the channel length of the decrease in the breakdown voltage can be prevented.
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