| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which easily approximately uniformly forms a low dielectric constant insulation film are strength of which can be improved easily. SOLUTION: The method comprises applying varnish 11b of a liquid material for a second layer poly(methyl silsesquioxane) film, which is a second layer low dielectric constant layer insulation film onto the surface of a first layer low dielectric constant layer insulation film 11a, formed on a semiconductor substrate 9, after heating the varnish 11b at about 100 deg.C and then at about 200 deg.C in two steps each for about two min, thereby adhering the varnish 11b onto the film 11a, placing the varnish 11b in a low-pressure atmosphere of about 10 Torr containing Ar as a main component, heating and holding it at about 40 deg.C and irradiating the held varnish 11b with an electron beam at a radiation rate of about 1,000μC/cm<2> for about 30 min, thereby forming the second layer poly(methyl silsesquioxane)(MSQ) film 11b, having an approximately uniform quality and a strength enough for practical use.
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