发明名称 METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a pattern in which random crystal grain boundary or defects are decreased so as to obtain a recording medium which uses fine particles and to obtain a method for manufacturing the recording medium. SOLUTION: The method for forming a pattern includes a process of pressing a pattern of recesses and projections of the crystal surface composed of fine particles having particle size of 1 to 100 nm to the surface of a resist, a process of casting a resist solution or a fused liquid of the resist onto the crystal surface, or a process of casting monomers onto the crystal surface and then polymerizing to transfer the pattern of recesses and projections on the resist surface.
申请公布号 JP2002298337(A) 申请公布日期 2002.10.11
申请号 JP20010095026 申请日期 2001.03.29
申请人 TOSHIBA CORP 发明人 NAITO KATSUYUKI;SAKURAI MASATOSHI
分类号 G11B5/84;G11B7/26;(IPC1-7):G11B5/84 主分类号 G11B5/84
代理机构 代理人
主权项
地址