发明名称 SUBSTRATE PROCESSOR
摘要 PROBLEM TO BE SOLVED: To provide a natural oxide film removing device which can rapidly raise and lower the temperature of a wafer. SOLUTION: The natural oxide film removing device 10 removes a natural oxide film, formed on the wafer on a remote plasma dry cleaning basis; and a buffer plate 23, where a heat exchanger 17 is installed is laid on the base 16 of a holder 15 which holds the wafer 1, thermoelectric modules 26 using Peltier elements 27 are arranged on the buffer plate 26, and susceptors 30 are installed on the thermoelectric modules 26. Consequently, the wafer is forcibly cooled by the thermoelectric modules to prevent the processing capacity for the natural oxide film by natural oxide film removing gas from decreasing. When a surface processing film undergoes sublimation, the wafer is heated by the thermoelectric modules, together with a lamp heater to shorten the heating time. The susceptors are forcibly cooled by the thermoelectric modules, after the sublimation to shorten the wait time of a wafer to be processed next. Thus, the throughput of the natural oxide film removing device can be improved.
申请公布号 JP2002299319(A) 申请公布日期 2002.10.11
申请号 JP20010095809 申请日期 2001.03.29
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKEBAYASHI MOTONARI
分类号 C23C14/50;C23C16/46;H01L21/205;H01L21/22;H01L21/26;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23C14/50
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