发明名称 |
FILM FORMING METHOD AND FILM FORMING DEVICE |
摘要 |
A film forming method, comprising the steps of generating plasma (10) in a film forming chamber (2), exciting mainly nitrogen gas (11) in the film forming chamber (2), and mixing hydrogen gas-diluted diborane gas (13) with the excited nitrogen gas for reaction to form a boron nitride film (15) on a substrate (4), wherein the nitrogen gas (11) is fed excessively at the beginning of film formation to suppress the occurrence of amorphous phase on a boundary face, whereby the hygroscopic resistance on the boundary face of the substrate can be increased and the low dielectric constant can be kept unchanged.
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申请公布号 |
WO02080259(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
WO2002JP03074 |
申请日期 |
2002.03.28 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD.;SAKAMOTO, HITOSHI;UEDA, NORIAKI;SUGINO, TAKASHI |
发明人 |
SAKAMOTO, HITOSHI;UEDA, NORIAKI;SUGINO, TAKASHI |
分类号 |
C23C16/38;C04B35/583;C23C16/34;C23C16/36;H01L21/31;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):H01L21/314 |
主分类号 |
C23C16/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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