| 摘要 |
A method of improving the light yield of Oxyorthosilicate scintillation crystals, such as Lutetium Oxyorthosilicate, Yttrium Oxyorthosilicate, Lutetium Gadolinium Oxyorthosilicate or Lutetium Yttrium Oxyorthosilicate scintillation crystals. In accordance with the teachings of the preferred embodiment, the Oxyorthosilicate scintillation crystals are annealed in a atmosphere selected to be a reducing atmosphere or slightly oxidizing at a selected annealing temperature. In this regard, in the preferred embodiment, the Oxyorthosilicate scintillation crystals are heated in a furnace. During the annealing cycle, the temperature is ramped up from room temperature to the annealing temperature over a selected period of time. After a second selected period of time of sustaining the annealing temperature, the annealing temperature is then ramped down over for a selected period of time. Annealing Oxyorthosilicate scintillation crystals in this manner is shown to improve the scintillation efficiency of the Oxyorthosilicate scintillation crystal.
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