| 摘要 |
First, an active layer (3) of quantum well structure made of a semiconductor material is sandwiched by n-type and p-type clad layers (2, 4) made of a semiconductor material larger in band gap than the semiconductor of active layer, and a semiconductor laminate wafer (10) is formed so as to compose a laser resonator. The wafer is cleaved into bar form so as to expose end faces of the resonator. Further a thin film (11) containing a dopant is formed on at least one of the end faces of the resonator, and then end face coat films (12, 13) are formed. Thereafter it is heated to diffuse the dopant on the end face of the resonator. As a result, the band gap can be increased only on the resonator end face securely, and therefore this manufacturing method realizes a semiconductor laser having a window structure so as not to absorb light at the end face and capable of preventing deterioration of end face due to surface re-bonding.
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