| 发明名称 |
MOS transistor with ramped gate oxide thickness and method for making same |
| 摘要 |
The invention relates to a transistor having a ramped gate oxide thickness, a semiconductor device containing the same and a method for making a transistor.
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| 申请公布号 |
US2002145166(A1) |
申请公布日期 |
2002.10.10 |
| 申请号 |
US20020160101 |
申请日期 |
2002.06.04 |
| 申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
KACHELMEIER MARK T. |
| 分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/51;H01L29/78;(IPC1-7):H01L31/113;H01L31/062;H01L29/94;H01L29/76 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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