发明名称 PLASMA PROCESSING DEVICE
摘要 A micro wave plasma processing device, wherein a tapered surface for relieving a variation in impedance and a member having an intermediate dielectric constant are installed between a micro wave feeding wave guide and a micro wave antenna, whereby the formation of reflected wave at the connection part between the micro wave feeding wave guide and the micro wave antenna can be suppressed to increase a power feeding efficiency and suppress discharge so as to stabilize the formation of plasma in the plasma processing device.
申请公布号 WO02080250(A1) 申请公布日期 2002.10.10
申请号 WO2002JP03109 申请日期 2002.03.28
申请人 OHMI, TADAHIRO;TOKYO ELECTRON LIMITED;HIRAYAMA, MASAKI;SUGAWA, SHIGETOSHI;GOTO, TETSUYA 发明人 OHMI, TADAHIRO;HIRAYAMA, MASAKI;SUGAWA, SHIGETOSHI;GOTO, TETSUYA
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01L21/31;H01L21/306 主分类号 H05H1/46
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