| 摘要 |
The semiconductor device having electrostatic discharge protector includes a gate electrode on a first conductive type semiconductor substrate, a second conductive type source area in the semiconductor substrate at one lateral side of the gate electrode, and a second conductive type lightly doped drain area in the semiconductor substrate at the other lateral side of the gate electrode. A second conductive type heavily doped drain area is formed in a portion of the second conductive type lightly doped drain. The second conductive type heavily doped drain area is spaced from the gate electrode, to reduce/eliminate input capacitance of a high speed semiconductor device as well as improve an electrostatic discharge characteristic. A contact of conductive material forms an interface with the second conductive type heavily doped drain area that is recessed into the second conductive type heavily doped drain area.
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