Non-arsenic N-type dopant implantation for improved source/drain interfaces with nickel silicides

摘要

Disadvantageous roughness of interfaces between electrically conductive NiSi layers and n-doped Si interfaces arising during conventional salicide processing for forming shallow-depth source and drain junction regions of NMOS transistors and/or CMOS devices is avoided, or at least substantially reduced, by substituting implanted non-As-containing n-type dopant ions, such as P and/or Sb ions, for the conventionally utilized implanted As n-type dopant ions. If desired, shallow-depth source and drain extensions may be formed by implantation of As-containing n-type dopant ions above the region comprising the non-As-containing dopant ions without causing roughness of the NiSi/n-doped Si interface.