| 摘要 |
<p>A film forming method, comprising the steps of generating plasma (10) in a film forming chamber (2), exciting mainly nitrogen gas (11) in the film forming chamber (2), and mixing hydrogen gas-diluted diborane gas (13) with the excited nitrogen gas for reaction to form a boron nitride film (15) on a substrate (4), wherein the nitrogen gas (11) is fed excessively at the beginning of film formation to suppress the occurrence of amorphous phase on a boundary face, whereby the hygroscopic resistance on the boundary face of the substrate can be increased and the low dielectric constant can be kept unchanged.</p> |
