发明名称 |
EFG crystal growth apparatus and method |
摘要 |
An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.
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申请公布号 |
US2002144649(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20010826073 |
申请日期 |
2001.04.04 |
申请人 |
ASE AMERICAS, INC. |
发明人 |
MACKINTOSH BRIAN H.;OUELLETTE MARC |
分类号 |
C30B15/00;C30B15/34;C30B29/06;(IPC1-7):C30B35/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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主权项 |
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地址 |
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