发明名称 |
Fine pitch wafer bumping process |
摘要 |
A fine pitch wafer bumping process comprises: providing a wafer that has a plurality of contact pads exposed by a passivation layer formed on the surface of the wafer, wherein an under bump metal (UBM) is formed respectively on each contact pad; on the surface of the wafer, forming a first mask film having a plurality of first openings that expose respectively the under bump metals (UBM); filling a first solder material respectively in the first openings; reflowing the first solder material into a plurality of solder posts; on the first mask film, forming a second mask film having a plurality of second openings that respectively expose the first openings; filling a second solder material respectively in the second openings; reflowing the second solder material and the first solder posts; removing the first and second mask films; and reflowing the first and second solder posts to form a plurality of bumps. |
申请公布号 |
US2002146646(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20010827080 |
申请日期 |
2001.04.04 |
申请人 |
JAO RAYMOND;KO ERIC;YANG ALEX |
发明人 |
JAO RAYMOND;KO ERIC;YANG ALEX |
分类号 |
H01L21/60;H01L23/485;H05K3/34;(IPC1-7):G03F7/00;G03C5/00 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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