HIGH-POWER RADIO-WAVE AND MICROWAVE TRANSISTOR

摘要

semiconductor electronics. SUBSTANCE: capacitor plate connected to transistor input electrode is divided into insulated sections. Area of each section is chosen so as to attain minimum reactance of LC section of separate transistor cell or group of cells connected to mentioned section of capacitor plate at operating frequency of transistor. This reduces reactive input power level of transistor internal matching LC section. EFFECT: enhanced power gain of transistor. 2 dwg