| 摘要 |
On sequentially transferring patterns formed on a mask onto a plurality of divided areas on a substrate, when a new divided area on the substrate exposed, the substrate is moved from the exposure position of the preceding divided area to the exposure position of the new divided area in consideration of thermal expansion of the substrate at this stage. Thereafter, the mask pattern is transferred onto the predetermined divided area. With this process, exposure is performed with the respective shot areas arranged on the substrate at a desired interval in a cooled state after exposure. This makes it possible to improve the overlay accuracy with respect to the subsequent layer while performing exposure with high overlay accuracy with respect to the preceding layer.
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