发明名称 |
Optical device having current blocking layer of buried ridge structure and fabrication method thereof |
摘要 |
An optical device having a current blocking layer of a buried ridge structure and a fabrication method thereof are disclosed. This invention reduces a leakage current between active layer and ion implant layer in buried ridge structure. To minimize leakage current, a P-N-P current blocking layer and an ion implanting current blocking layer are combined. An optical device of the present invention includes: active layers of a mesa structure in a predetermined region on a substrate; a first current blocking layer of a P-N-P structure, which is placed to cover the mesa structure; and a second current blocking layer of a buried ridge structure, which is placed to surround the environs of the first current blocking layer.
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申请公布号 |
US2002145149(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20020115696 |
申请日期 |
2002.04.03 |
申请人 |
KIM SUNG BOCK;KIM JEONG SOO |
发明人 |
KIM SUNG BOCK;KIM JEONG SOO |
分类号 |
H01S5/32;H01L33/14;H01S5/22;H01S5/227;(IPC1-7):H01L33/00 |
主分类号 |
H01S5/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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