发明名称 |
Semiconductor light emitting device and fabrication method thereof |
摘要 |
Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.
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申请公布号 |
US2002145148(A1) |
申请公布日期 |
2002.10.10 |
申请号 |
US20010024883 |
申请日期 |
2001.12.17 |
申请人 |
OKUYAMA HIROYUKI;DOI MASATO;BIWA GOSHI;OOHATA TOYOHARU |
发明人 |
OKUYAMA HIROYUKI;DOI MASATO;BIWA GOSHI;OOHATA TOYOHARU |
分类号 |
H01L21/205;H01L33/16;H01L33/24;H01L33/32;H01S5/323;(IPC1-7):H01L21/00;H01L33/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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