INTEGRATED CIRCUIT STRUCTURE

摘要

An integrated circuit structure, wherein boron nitride films are provided as protective films (34) between inter-layer insulation films (33) with a low dielectric constant formed of organic coated films or porous films so as to form an inter-layer insulation multi-layer film, whereby, since the inter-layer insulation films (33) with a low dielectric constant are combined with the boron nitride films with excellent mechanical and chemical resistances, high heat conductivity, and low dielectric constant, a reduction in dielectric constant can be achieved in such a state that adhesiveness and hygroscopic resistance are maintained.