| 摘要 |
<p>A simplified production process for a hollow silicon-based structure. A production device for silicon-based structure, which produces a hollow silicon-based structure by working on a sample having a silicon oxide layer formed on a silicon substrate and covered with a silicon layer, and which comprises first gas supply units (20, 21), second gas supply units (30, 31), a etching reaction chamber (10), selectively communicating means (23-26, 34, 35), and a gas exhaust means (42). A first gas etches silicon, while a second gas etches silicon oxide but scarcely etches silicon. Selectively communicating means (23-26, 34, 35) selectively allow the etching reaction chamber (10) to communicate to either of first gas supply units (20, 21) and second gas supply units (30, 31). The gas exhaust mean (42) exhausts gas in the etching reaction chamber (10).</p> |
