| 摘要 |
The present invention is directed to a process for forming one or more lateral nanostructures on a subtrate (20). The process comprises the steps of: providing a substrate (20); depositing a first layer (24) on the substrate; forming at least one edge (26) on the first layer; depositing at least one separation layer (28) on the first layer, depositing a third layer (30) on the separation layer; and removing a portion of the separation layer and the third layer from the substrate such that a substantially planar surface is formed exposing the first layer, the separation layer, and the third layer (30).
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