| 摘要 |
<p>A film forming method, comprising the steps of generating plasma (10) in a film forming chamber (2), exciting mainly nitrogen gas (11) in the film forming chamber (2), and reacting hydrogen gas-diluted diborane gas (13) to form a boron nitride film (15) on a substrate (4), whereby the boron nitride film (15) with excellent mechanical and chemical resistances, high heat conductivity, and a low dielectric constant of (k) can be formed on the substrate at a high rate.</p> |
