Light emitting device comprises an inverted aluminum indium gallium nitride arrangement with a hetero-junction having an emission layer arranged between an n-conducting layer and a p-conducting layer, and electrodes

摘要

Light emitting device comprises: an inverted aluminum indium gallium nitride arrangement with a hetero-junction having an emission layer arranged between an n-conducting layer and a p-conducting layer; and two electrodes, each having an incidence reflectivity which does not exceed 80%. One electrode is an n-electrode connected to the n-conducting layer and one electrode is a p-electrode connected to the p-conducting layer. Independent claims are also included for alternative light emitting devices. Preferred Features: The p-electrode has an absorption of less than 10% and the n-electrode has an absorption of less than 20%. The p-electrode and n-electrode are made from silver or aluminum.