Gate-overlapped lightly doped drain polysilicon thin film transistor

摘要

A gate-overlapped lightly doped drain (LDD) polysilicon thin film transistor (TFT) has a transparent insulating substrate, a polysilicon layer formed on the substrate, and a gate insulating layer formed on the polysilicon layer. The polysilicon layer has a channel region, an LDD structure surrounding the channel region, and a source/drain region surrounding the LDD structure. A first gate layer is patterned on the gate insulating layer and positioned over the channel region. A second gate layer is patterned on the first gate layer and extends to cover a predetermined area of the gate insulating layer that covers the LDD structure.