发明名称 CHIP WITH PROTRUDING MICROELECTRODES AND METHOD FOR THE PRODUCTION THEREOF
摘要 Disclosed is a method for the production of microelectrodes (22) on a chip (10). The inventive method consists of the following: a passivating layer is initially applied to the surface (12) of a substrate (10) with the exception of certain areas (18) thereof. This is followed by selective epitactic crystal growth on said areas (18) of the chip in order to produce protruding microelectrodes (22) which can be doped in such a way as to exhibit sufficient conductivity. The inventive method can be integrated into a CMOS process in order to produce a large number of microscopically small microelectrodes which protrude from the surface of the chip and which can be directly combined with control circuits which are produced on the chip as part of the CMOS process.
申请公布号 WO0101455(A3) 申请公布日期 2002.10.10
申请号 WO2000EP04905 申请日期 2000.05.30
申请人 INSTITUT FUER MIKROELEKTRONIK STUTTGART;DUDEK, VOLKER;GRAF, HEINZ, GERHARD;GRAF, MICHAEL;HOEFFLINGER, BERND 发明人 DUDEK, VOLKER;GRAF, HEINZ, GERHARD;GRAF, MICHAEL;HOEFFLINGER, BERND
分类号 H01L21/20;H01L21/285;H01L23/485 主分类号 H01L21/20
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