METHOD OF REDUCING POST-DEVELOPMENT DEFECTS IN AND AROUND OPENINGS FORMED IN PHOTORESIST BY USE OF MULTIPLE DEVELOPMENT/RINSE CYCLES
摘要
In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.
申请公布号
WO0199161(A3)
申请公布日期
2002.10.10
申请号
WO2001US19815
申请日期
2001.06.21
申请人
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
LU, ZHIJIAN;THOMAS, ALAN;GUTMANN, ALOIS;CHEN, KUANG, JUNG;LAWSON, MARGARET