发明名称 THREE-DIMENSIONAL METAL DEVICES HIGHLY SUSPENDED ABOVE SEMICONDUCTOR SUBSTRATE, THEIR CIRCUIT MODEL, AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>Disclosed are a three dimensional metal device floated over a semiconductor substrate, a circuit thereof, and a manufacturing method thereof. A passive electric device for wireless communications and optical communications, such as a spiral inductor, a solenoid inductor, a spiral transformer, a solenoid transformer, a micro mirror, a transmission line is floated over and apart by a few ten micrometers from the semiconductor substrate. These three dimensional metal devices remarkably decrease a signal loss to the substrate, to thereby enhance the device performance, to allow a modeling of a device separated from the substrate, and to make it possible to form an integrated circuit below the device. Further, the three dimensional metal device is manufactured in a monolithic method on the integrated circuit such that it does not affect on the integrated circuit formed therebelow.</p>
申请公布号 WO2002080279(A1) 申请公布日期 2002.10.10
申请号 KR2001002260 申请日期 2001.12.26
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