Light emitting group III-nitride arrangement comprises substrate, an n-region lying on substrate, an active region lying over the n-region, smooth layer containing indium arranged between the substrate and active region, and spacer layer

摘要

Light emitting group III-nitride arrangement comprises a substrate (11); an n-region (12) lying on the substrate; an active region (16) lying over the n-region; a smooth layer (14) containing indium arranged between the substrate and the active region; and a spacer layer (15) lying between the smooth layer and the active region. The smooth region is at least 200 Angstroms thick and contains a higher doping concentration than the spacer layer. A surface of the smooth layer lies less than 0.5 microns m from the surface of the active region. An Independent claim is also included for a process for the production of the light emitting III-nitride arrangement. Preferred Features: The smooth layer is made from InGaN containing 2-12 % In and is doped with silicon. The spacer layer is made from GaN or AlGaN.