| 摘要 |
A semiconductor device having on top of each other in the order mentioned at least the following layers: a drain contact (1), a drift layer (3) being low doped according to a first conductivity type, n or p, a source region layer (4) being highly doped according to said first type and a source contact (5), said device also comprising a grid (6) formed by a plurality of first regions (7) being doped according to a second conductivity type being opposite to said first type, located in said drift layer and laterally separated by drift layer portions (8), said grid being adapted to assume at least two different states, namely a first blocking state in which said drift layer portions are completely depleted, so that a continuous layer is formed by said grid, and a second state in which conducting channels of said first type are formed between adjacent first regions (7) of the grid (6) and connect the source region layer with the drift layer on the opposite side of the grid. |
