METHOD FOR IMPROVING COPPER THIN FILM ADHESION TO METAL NITRIDE SUBSTRATE BY ADDITION OF WATER

摘要

PURPOSE: A method for improving copper thin film adhesion to a metal nitride substrate by addition of water is provided to form a thin copper seed layer, increase a deposition rate and reduce resistivity of a deposited thin film by implanting a proper quantity of vapor into the surface of a wafer. CONSTITUTION: The wafer(28) is inserted into a chemical vapor deposition(CVD) chamber(20). Moisture is added to helium gas(16) to form wet helium gas(22) that is used as an atmosphere in the CVD chamber. A copper seed layer is deposited in a flow rate of the wet helium gas from 5.0 sccm to 20.0 sccm while the temperature of the wafer is increased from an ambient temperature to a temperature of 150-230 deg.C. The copper thin film is deposited at a temperature of 150-230 deg.C and in a flow rate of the wet helium gas from 0.2 sccm to 1.0 sccm.