| 摘要 |
PROBLEM TO BE SOLVED: To provide a photo mask and a production method for semiconductor device, with which accuracy in the alignment of a via hole in a dual damassin structure and an upper wiring layer is improved and a recess or step is prevented from being generated by wiring materials in a hole for alignment. SOLUTION: A via alignment mark M1 provided on the photo mask for aligning the via hole to a lower wiring layer is composed of a slit SL1 of a dimension larger than an optically detectable width dimension to obtain an aspect ratio as close as possible to the aspect ratio of the via hole in respect to the thickness of a layer insulating film, and located in relation to a lower layer alignment mark DM formed from the lower wiring layer. The central position of the via alignment mark can be highly accurately detected by an optical method, and when etching the hole for alignment opened by the via alignment mark M1, the base insulating film is not over etched. |
