| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize an active matrix type display device having high aperture ratio. SOLUTION: The active matrix type display deice includes is constituted of each pixel having top-gate-type thin film transistor(TFT), auxiliary capacitor CSC and liquid crystal capacitor Clc, respectively. First electrode 30 of the auxiliary capacitor is also used as p-Si active layer 14 of the TFT 1 and second electrode 32 is partially overlapped with the active layer 14 through insulation layer 12 under the active layer 14. In this way, the auxiliary capacitor CSC can be built in the area where the TFT 1 is formed, which results in the prevention of lowering of the aperture ratio due to formation of the auxiliary capacitor CSC. Building the second electrode 32 with a light shielding materials shields the active layer of TFT 1 from incident light from a first substrate and prevents generation of current due to light leakage at the active layer 14, which realizes high contrast display. The second electrode 32 can be used as a black matrix.</p> |
