| 摘要 |
PROBLEM TO BE SOLVED: To make a semiconductor single crystal free of cracks, polycrystal lumps, etc., on an Si substrate. SOLUTION: A reaction-inhibiting layer is formed in order to prevent the reaction of Si and a semiconductor of a gallium nitride system and the reaction-inhibiting layer (crystalline material B) consisting of, for example, SiC or AlN, etc., having a melting point or heat resistance higher than that of the semiconductor (semiconductor crystal A) of the gallium nitride system is deposited on the ground surface substrate (Si substrate) in the manner described above, by which the 'reaction section' consisting of GaN polycrystal lumps, etc., near the silicon boundary is no longer formed even in the case the crystal of the semiconductor (semiconductor crystal A) of the gallium nitride system is grown for a long time. Also, many projecting parts are formed, by which the semiconductor (semiconductor crystal A) of the gallium nitride system is grown in a transverse direction as well with the planar apexes of the projecting parts as start points. As a result, the stress between the antireaction layer and the semiconductor crystal A is drastically relieved and the through-cracks of the longitudinal direction are not produced in the reaction-inhibiting layer and therefore the Si substrate can be surely shut off and the reaction-inhibiting effect is made sure.
|
