| 摘要 |
PURPOSE: An electrode material with improved hydrogen degradation resistance is provided to be used in a non-volatile memory(NVM), a dynamic random access memory(DRAM), a capacitor, a pyroelectric infrared sensor, an optical display, an optical switch, a piezoelectric transducer and a surface acoustic wave device by including a bottom electrode, a ferroelectric layer and a top electrode formed on the ferroelectric layer and formed of a combination of the first metal taken from a group of metals consisting of platinum and iridium and the second metal taken from a group of metals consisting of aluminum and titanium. CONSTITUTION: The bottom electrode is formed. The ferroelectric layer is formed on the bottom electrode. The top electrode is deposited on the ferroelectric layer. The first metal taken from the group of metals consisting of platinum and iridium and the second metal taken from the group of metals consisting of aluminum and titanium are simultaneously deposited. A passivation layer is formed by annealing the abovementioned structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.
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