| 摘要 |
PROBLEM TO BE SOLVED: To provide a effective production method of silicon carbide powder suitable for producing a silicon carbide monocrystal excellent in electron characteristic with less crystal defects. SOLUTION: The production method of silicon carbide powder is characterized by aftertreating at 210 deg.C or more, after the mixture which mixes at least a kind of silicon sources, and at least a kind of carbon sources is fired. Preferably, the aftertreatment is performed at 2,150-2,400 deg.C, the silicon source is an alkoxysilane compound, the alkoxysilane compound is at least each ethoxysilane dimer or ethoxysilane polymer, the carbon source is a phenol resin, the aftertreatment is performed in an argon atmosphere and the time of the aftertreatment is 3-8 hours. |
