发明名称 SPUTTER SOURCE AND FILM FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering source having a simple configuration, which makes a target eroded uniformly and can uniformize the thickness distribution of a thin-film deposited on a workpiece to be treated, and a film forming apparatus therewith. SOLUTION: This sputtering source has an inner magnet (1) toroidally arranged on a plane vertical to a rotating axis, and an outer magnet (2) toroidally arranged on the above plane and outside of the above inner magnet. A center line (3) of a magnetic field tunnel formed between the inner magnet and the outer magnet is a toroidal line, having an arc-shaped part (3A) and a fan-shaped straight part (3B) which is connected to the above arc-shaped part. An angleθformed by the symmetrical axis of the above center line and the above straight part is 45 degrees or more and 135 degrees or less. In addition, at least one part of the outer magnet is laid outside of the target.
申请公布号 JP2002294446(A) 申请公布日期 2002.10.09
申请号 JP20010098963 申请日期 2001.03.30
申请人 SHIBAURA MECHATRONICS CORP 发明人 KUROIWA SHUNJI;KAMO KATSUNAO
分类号 C23C14/35;G11B7/26;(IPC1-7):C23C14/35 主分类号 C23C14/35
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