| 摘要 |
A semiconductor device, having a contact pad grown by an anisotropical silicon selective growth technique, includes a first word line crossing a diffusion layer formed on a substrate and surrounded by an element separating region at a right angle, a second word line parallel with the first word line formed over a rounded corner of the diffusion layer, and an area of the diffusion layer rectangularly partitioned by the first and second word lines. So that anisotropical silicon selective epitaxial growth from this area of the diffusion layer is achieved, avoiding isotropical growth deteriorated by the rounded corner. <IMAGE> |
