METHOD FOR FORMING POLYCRYSTALLINE SEMICONDUCTOR THIN- FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR CARRYING OUT THESE METHODS

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus which can easily form a thin film of a semiconductor such as polycrystalline silicon having high crystallization rate and high quality, on a large area and at a low cost. SOLUTION: The method for obtaining the polycrystalline semiconductor thin-film 7 comprises forming an amorphous or a microcrystalline silicon thin- film 100A containing granular products of SiOx or/and SiNy, on a substrate 1, by a catalytic CVD method or the like; etching the amorphous constituents by reacting the silicon thin film 100A with the hydrogen active species which are generated by means of contacting hydrogen gas or hydrogen-including gas with a heated catalyzer body 46 (by bias catalytic AHA(Atomic Hydrogen Anneal) treatment); further forming a layer 100B of silicon ultra-fine particles through precipitating the ultra-fine particles of silicon out of SiOx or/and SiNy; and growing a polycrystalline semiconductor thin-film on the above seeds by the catalytic CVD method or the like (by further repeating the catalytic AHA treatment and the catalytic CVD or the like).