发明名称 |
Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element |
摘要 |
<p>A magnetoresistive film includes a nonmagnetic film, and a structure in which magnetic films are formed on the two sides of the nonmagnetic film. At least one of the magnetic films is a perpendicular magnetization film. A magnetic film whose easy axis of magnetization is inclined from a direction perpendicular to the film surface is formed at a position where the magnetic film contacts the perpendicular magnetization film but does not contact the nonmagnetic film. A memory, magnetic element, magnetoresistive element, and magnetic element manufacturing method are also disclosed.</p> |
申请公布号 |
EP1248264(A2) |
申请公布日期 |
2002.10.09 |
申请号 |
EP20020007503 |
申请日期 |
2002.04.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
IKEDA, TAKASHI;KOGANEI, AKIO;OKANO, KAZUHISA |
分类号 |
G11C11/15;G11C11/16;(IPC1-7):G11C11/16 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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